 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HN624316 Series High Speed 1048576-word x 16-bit / 2097152-word x 8-bit CMOS Mask Programmable Read only Memory Rev. 0.0 Dec. 1, 1995 Description The HN624316 is a 16-Mbit CMOS mask-programmable ROM organized either as 1048576 words by 16 bits or as 2097152 words by 8 bits. Realizing low power consumption, this memory is allowed for battery operation. And a high speed access of 120/150 ns is the most suitable to the system using a high speed microcomputer by 16 bits as 8086 and 68000 e.t.c.. Features * * * * Single +5 V power supply Maximum access time: 120/150 ns (max) Low power consumption: 300 mW (typ) active 5 W (typ) standby Byte-wide or word-wide data organization with BHE Ordering Information Type No. HN624316P-12 HN624316P-15 HN624316FB-12 HN624316FB-15 Access Time 120 ns 150 ns 120 ns 150 ns Package 600 mil 42-pin plastic DIP (DP-42) 44-pin plastic SOP (FP-44D) HN624316 Series Block Diagram A0 Address buffer Memory array Hex/ Byte 3-state output buffer D0 to to A19 D15/(D7) CE BHE (A-1)*1 OE Note: 1. A-1 is least significant address. When BHE is 'low', D14 to D8 goes the high impedance state. BHE = VIH : 16-bit (D15 to D0) BHE = VIL : 8-bit (D7 to D0) 2 HN624316 Series Pin Arrangement HN624316P NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE VSS OE D0 D8 D1 D9 D2 D10 D3 D11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 HN624316FB 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 NC A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE VSS D15/A-1 D7 D14 D6 D13 D5 D12 D4 VCC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE VSS OE D0 D8 D1 D9 D2 D10 D3 D11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE VSS D15/A-1 D7 D14 D6 D13 D5 D12 D4 VCC (Top view) (Top view) Absolute Maximum Ratings Parameter Supply voltage All input and output voltage Operating temperature range Storage temperature range Temperature under bias Note: 1. With respect to V SS . Symbol VCC Vin, Vout Topr Tstg Tbias Value -0.3 to +7.0 -0.3 to VCC + 0.3 0 to +70 -55 to +125 -20 to +85 Unit V V C C C Note 1 1 Recommended DC Operating Conditions (VSS = 0 V, Ta = 0 to +70C) Parameter Supply voltage Input voltage Symbol VCC VIH VIL Min 4.5 2.2 -0.3 Typ 5.0 -- -- Max 5.5 VCC + 0.3 0.8 Unit V V V 3 HN624316 Series DC Characteristics (VCC = 5 V 10%, VSS = 0 V, Ta = 0 to +70C) Parameter Supply current Active Symbol I CC Min -- Max 90/80 Unit mA Test Conditions VCC = 5.5 V, I DOUT = 0 mA, t RC = 120 ns/150 ns VCC = 5.5 V, CE V CC - 0.2 V VCC = 5.5 V, CE 2.2 V VIN = 0 to VCC CE = 2.2 V, VOUT = 0 to VCC I OH = -205 A I OL = 1.6 mA Standby Standby Input leakage current Output leakage current Output voltage I SB1 I SB2 | IIL | | IOL | VOH VOL -- -- -- -- 2.4 -- 30 3 10 10 -- 0.4 A mA A A V V Capacitance (VCC = 5 V 10%, VSS = 0 V, Ta =25C, VIN = 0 V, f = 1 MHz) Parameter Input capacitance Output capacitance Symbol Cin Cout Min -- -- Max 15 15 Unit pF pF Note: This parameter is sampled and not 100% tested. 4 HN624316 Series AC Characteristics (VCC = 5 V 10%, VSS = 0 V, Ta = 0 to +70C) * * * * Output load: 1TTLgate + CL = 100 pF (including jig capacitance) Input pulse level: 0.45 to 2.4 V Input and output timing reference level: 1.5 V Input rise and fall time: 5 ns HN624316-12 Parameter Read cycle time Address access time CE access time OE access time BHE access time Output hold time from address change Output hold time from CE Output hold time from OE Output hold time from BHE CE to output in high-Z OE to output in high-Z BHE to output in high-Z CE to output in low-Z OE to output in low-Z BHE to output in low-Z Note: Symbol Min t RC t AA t ACE t OE t BHE t DHA t DHC t DHO t DHB t *1 CHZ *1 HN624316-15 Min 150 -- -- -- -- 0 0 0 0 -- -- -- 5 5 5 Max -- 150 150 70 150 -- -- -- -- 70 70 70 -- -- -- Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Max -- 120 120 55 120 -- -- -- -- 40 40 40 -- -- -- 120 -- -- -- -- 0 0 0 0 -- -- -- 5 5 5 t OHZ t BHZ t CLZ t OLZ t BLZ *1 1. t CHZ and tOHZ and t BHZ are defined as the time at which the output achieves the open circuit conditions and are not referred to output voltage levels.. 5 HN624316 Series Timing Waveforms Word Mode (BHE = `VIH') or Byte Mode (BHE = `VIL') t RC Address t AA CE t CLZ OE t OLZ Dout Valid data t OE t OHZ t DHO High-Z t ACE t CHZ t DHC t DHA Notes: 1. tDHA, tDHC, tDHO: Determined by faster. 2. tAA, tACE, tOE: Determined by slower. 3. tCLZ, tOLZ: Determined by slower. Word Mode, Byte Mode Switch Address High-Z t AA t DHA High-Z BHE t BHZ D7 to D0 t DHB D15 to D8 High-Z Valid data t BLZ Valid data t BHE Valid data Notes: 1. CE and OE are enable A19 to A0 are valid. 2. D15/A-1 pin is in the output state when BHE is high, CE and OE are enable. Therefore, the input signals of opposite phase to the output must not be applied to them. 6 HN624316 Series Power Up Sequence 4.5V V CC 0V t ACE CE t Address (A2 to A19) Valid data t AA Dout Valid data t 0ns Notes: This device is used ATD (Address Transient Detector). Therefore, Transfer either CE or address (A2 to A19) after power up to 4.5 V. 7 HN624316 Series Package Information HN624316P Series (DP-42) Unit: mm 42 52.80 53.80 Max 22 15.0 Max 2.54 Min 5.06 Max 13.40 1 1.3 Max 1.20 21 15.24 0.51 Min 2.54 0.25 0.48 0.10 0.25 - 0.05 0 - 15 + 0.26 HN624316FB Series (FP-44D) Unit: mm 28.50 28.70 Max 44 23 12.60 3.00 Max 1 1.02 Max 22 0.17 0.05 16.04 0.30 1.72 0.40 0.10 1.27 0.10 0.12 M 0.19 0.10 0 - 10 0.80 0.20 8 |
Price & Availability of HN624316SERIES
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |